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This white paper highlights Wolfspeed’s fourth-generation silicon carbide (SiC) MOSFET technology, engineered for high-power electronics applications. Building on a legacy of SiC innovation, Wolfspeed has regularly unveiled cutting-edge technology solutions redefining industry benchmarks. Before the Gen 4 release, the third-generation SiC MOSFETs balanced important design elements for a broad spectrum of use cases, setting a benchmark for well-rounded performance in hard-switching applications.

In a market where some players narrowly focus on specific figures of merit (FOM), such as conduction losses, room temperature R_DS(on), or R_DS(on) × Qg, Wolfspeed takes a broader and more integrated approach. By simultaneously optimizing conduction losses, switching behavior, ruggedness, and reliability, Wolfspeed’s design philosophy ensures comprehensive performance. This commitment continues with the Gen 4 MOSFETs, delivering enhanced metrics that simplify system design and usability without compromising the ruggedness and durability Wolfspeed is known for.

Targeted at high-power automotive, industrial, and renewable energy systems, Gen 4 MOSFETs constitute a paradigm change in SiC technology. These devices provide a versatile foundation enabling a long-term road map of application-optimized bare die, module, and discrete products. Every Gen 4-based design focuses on three performance vectors: holistic system efficiency, remarkable durability, and low system cost—all of which let designers reach before unheard-of performance and value.

Please visit : Gen 4 Silicon Carbide Technology White Paper | Wolfspeed