Munich, Germany – 29 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has expanded its automotive power distribution portfolio with the SPOC™ Wire Guard BTS80009 SWPx 1ES, a highly integrated 12 V automotive eFuse with SPI interface. As the first member of a new smart power switch family, it combines a protected high-side switch with integrated I²t wire protection, software configurability, and advanced diagnosis. It is designed for new E/E architectures that support software-defined vehicle (SDV) concepts with over-the-air updates.The SPOC Wire Guard BTS80009 SWPx 1ES automotive eFuse provides ultrafast failure isolation in µs as well as precise current sensing, avoiding overdimensioning of the wire diameter compared with traditional melting fuses. At the same time, it ensures high availability of the power supply with freedom of interference. For permanently powered loads, the product features a dedicated idle mode with very low power consumption of only a few µA while maintaining full protection. To mitigate a limited amount of microcontroller I/O ports, its 24-bit SPI interface is daisy-chain-capable. To support platform reuse across vehicle variants, configuration, and protection parameters can be adjusted in software for each variant. In addition, SPOC Wire Guard devices provide real-time status, pre-warning indicators, and other diagnostics to improve vehicle availability and enable optimization throughout the vehicle’s lifecycle.SPOC Wire Guard also addresses growing needs for features supporting Advanced Driver Assistance Systems (ADAS) and enables fail-operational capabilities for L2++ to L5. It is offered as a Safety Element out of Context (SEooC) for use in systems up to ASIL-D in accordance with ISO 26262, with an integrated non-volatile memory (NVM) to configure an application-specific safe state. It can autonomously react to supply-voltage drops caused by load faults to protect the supply. The single-channel architecture helps prevent fault propagation to other outputs.The first family member, SPOC Wire Guard BTS80009 SWPx 1ES, is available in four variants with a scalable feature set (A, I, P, and F) and supports currents up to 34.5 A, making it suitable for replacing gate-driver ICs plus MOSFET and shunt solutions and delivering significant PCB savings.AvailabilityThe BTS80009 SWPx 1ES is now in production, with three further RDS (on) variants planned to follow by the end of 2026. Further information is available at www.infineon.com/spocwireguard.

Munich, Germany – 25 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced the AIROC™ UWB TSL100, the company’s first-generation ultra-wideband (UWB) product family for precise positioning and smart presence detection. As part of Infineon’s AIROC portfolio, the TSL100 features a new architecture aimed at reducing power consumption and enhancing security. The product family marks the start of a scalable UWB platform intended to support future standards such as IEEE 802.15.4ab and is compliant with industry consortium standards such as CCC, Aliro, and FiRa. The TSL100 combines ranging and sensing capabilities in a single device, enabling applications such as secured vehicle access, in-cabin presence detection, access control, contactless payment, ticketing, and indoor navigation, as well as industrial use cases including asset tracking and collision avoidance. With the introduction of the AIROC™ UWB TSL100, Infineon strengthens its position in secured connected systems and expands its AIROC™ wireless portfolio with a new family of UWB devices. These devices combine precise positioning and smart presence detection on a single chip, addressing growing demand across automotive, consumer, and industrial markets.Vehicle and building access systems as well as asset tracking and indoor navigation require very low power operation, reliable and robust RF performance to resolve non-line of sight scenarios like back pocket situations. Moreover, users and administrators demand highest security levels to avoid man-in-the-middle attacks. “Our AIROC UWB portfolio addresses these challenges by combining low power consumption, excellent first-path dynamic range and provable physical- and application-layer security. As a result, the first-generation AIROC UWB TSL100 SoC enables seamless access, positioning, and sensing capabilities while reducing system complexity,” said Maurizio Skerlj, Senior Vice President Authentication and Identity Solutions at Infineon. Enabling Secured Access and Digital Key ApplicationsThe AIROC UWB TSL100 product family comes in two variants: the TSL111A (AEC-Q100) for automotive OEMs and Tier-1 suppliers, and the TSL111C for consumer and industrial applications. The automotive variant targets use cases such as CCC Digital Key™, key fobs, NCAP-compliant presence detection, kick sensing, and intrusion detection, while the consumer and industrial variant supports smart access, asset tracking, tap-free payment, “find” applications, and indoor navigation. The integration of ranging and sensing on a single device reduces system complexity by eliminating the need for separate sensing subsystems in many applications.The AIROC UWB TSL100 offers the following key advantages for UWB implementations:Low power consumption: A low-power design achieves coin-cell battery lifetime of more than two years in CCC ranging schemes for key fobs. A dedicated low-power mode further reduces current consumption by more than 50 percent. Efficient Security: The PHY design enables highest FiRa/CCC security levels (48-bit) in challenging non-line-of-sight conditions, such as back-pocket scenarios. The system can detect and verify the security status of weak direct paths up to 100,000 times weaker than reflected paths.Cost-Optimized Sensing: The RF architecture supports sensing functions for applications such as presence detection, supporting NCAP scenarios as well as kick sensing and intrusion detection.AIROC Zoning: AIROC intent detection technology provides a system-level solution for configurable unlock zones as well as inside/outside detection for reliable access control performance while extending battery life for Aliro-enabled smart locks.The AIROC UWB TSL100 will be supported by an engineering sample kit that provides developers with access to Infineon’s latest UWB technology for rapid prototyping of secured access and sensing applications. The kit supports system-level evaluation, including ranging accuracy, sensing coverage, and power consumption, and helps accelerate hardware and software co-development, reducing time-to-market for next-generation UWB-enabled products.AvailabilityEngineering sample kits for the AIROC UWB TSL100 are available upon request. More information is available at www.infineon.com/airoc-uwb.

Munich, Germany – 02 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces a 24 kW battery backup unit (BBU) DC-DC reference design for high-voltage (HV) DC bus architectures in artificial intelligence (AI) data centers. The design is the first of its kind to operate directly from a battery stack to an 800 V DC bus, using 650 V and 1200 V silicon carbide (SiC) technology. It achieves a power density of 450 W/in³ and efficiency exceeding 99 percent within the same physical form factor as current low-voltage (LV) BBU implementations, addressing a key infrastructure bottleneck as data centers transition to higher-voltage DC distribution.“Powering AI at scale demands a systemic approach that optimizes every stage of the power delivery chain, from grid connection to the processor core,” says Magdalene Boebel, Senior Vice President and Business Line Head Power System ICs at Infineon. “Our 24 kW high-voltage BBU reference design, operating directly on an 800 V DC bus, sets a new benchmark in power density and efficiency, giving data center architects a fully integrated solution to meet the most demanding AI infrastructure requirements.”The reference design is based on a multi-level, multiphase non-isolated architecture combining stacked, interleaved, and coupled boost and buck stages. This approach reduces magnetic component volume directly, without relying on flying capacitors. A shared switching-leg topology establishes a common current path between the charge and discharge stages, enabling zero-voltage switching (ZVS) across the operating range. The outcome is reduced current ripple, fully integrated magnetics, and fast transient response, which are characteristics increasingly critical as AI server power draw becomes more dynamic and less predictable.The compact module measures 112 x 88 x 118 mm and integrates a 24 kW main power stage with a 2.4 kW auxiliary supply. Charger and discharger blocks share the EMI filter, capacitors, and protection MOSFETs, reducing total component count. Best-in-class SiC junction gate field-effect transistors (JFETs) provide ORing and hot-swap capability. A planar transformer combined with CoolSET™ implements the auxiliary SMPS in a compact, cost-efficient footprint.The DC-DC conversion stage is built around the CoolSiC™ MOSFET IMT65R033M2H, a 650 V device qualified for bidirectional buck-boost DC-DC operation in HV BBU applications. Its low conduction and switching losses support stage efficiencies of higher than 99 percent, reducing thermal load at rack level. During grid disturbances, generator switchovers, or outages, the device transfers energy rapidly between the HV DC bus and the battery with minimal losses, extending hold-up time reliably. A 650 V breakdown rating, robust body diode, 175 °C junction temperature rating, and .XT packaging technology provide resilience under voltage spikes, high dv/dt transients, and continuous thermal cycling. Consistent Vgs(th) characteristics across devices simplify multi-phase design and support redundant rack configurations. This architecture is documented in Infineon's REF_12KW_HFHD_PSU reference design, which demonstrates the IMT65R033M2H in high-power DC-DC stages for rack-level HV BBU applications.The complete bill of materials comprises the following Infineon components: CoolSiC MOSFET 650 V Generation 2 including the IMT65R033M2H, EiceDRIVER™ gate drivers, TLE497x current sensors, PSOC™ Performance line MCU, CoolSET IC for the auxiliary SMPS, and a 1.7 kV SiC MOSFET.Further design characteristics include reduced common-mode noise with negligible AC components, and fully integrated magnetics. Three power cards provide mechanical connections for the DC positive, DC negative, and midpoint rails while simultaneously serving as structural elements of the assembly, contributing to the solution's overall compactness.The transition to higher-voltage DC bus architectures in data centers is driven by efficiency and distribution loss advantages at rack and facility scale. BBUs are a key component of this infrastructure shift, maintaining continuous power delivery to AI servers during grid events. The 24 kW HV BBU reference design demonstrates how SiC-based DC-DC conversion can meet the density, efficiency, and reliability requirements of this transition. Infineon's portfolio spanning silicon (Si), SiC, and gallium nitride (GaN) covers the full power delivery chain from grid to processor core.AvailabilityMore information about Infineon's battery backup unit solutions for AI data centers, including technical documentation and reference design details, is available at www.infineon.com/bbu-ai.Infineon at PCIM Europe 2026PCIM Europe will take place in Nuremberg, Germany, from 9 to 11 June 2026. Infineon will present its products and solutions for decarbonization and digitalization in hall 7, booth 470. For press inquiries, please contact media.relations@infineon.com. Industry analysts interested in a briefing can email MarketResearch.Relations@infineon.com. Information about Infineon’s PCIM 2026 show highlights is available at www.infineon.com/pcim.  

First-in-industry low-side gate driver with adjustable negative gate drive bias offers safer operation, reduced component count, and increased power density for EV powertrain and DC-DC converter designs.The IX4352NEAU is the first AEC-Q100-qualified low-side gate driver to offer an integrated and adjustable negative gate drive bias, eliminating the need for an external negative voltage rail or the costly DC-DC converters typically required to suppress parasitic turn-on of high-speed power devices. This unique capability simplifies gate driver design, improves switching performance, and reduces total system cost.“By integrating the IX4352NEAU in their latest designs, our customers can develop safer, more compact, and more efficient power systems,” said June Zhang, Product Manager, Integrated Circuits Division at Littelfuse. “This helps accelerate their time to market, while reducing total system cost in the growing markets of automotive DC-DC converters and automotive drivetrains.”Key Features and BenefitsAdjustable negative gate drive bias (down to −10 V): Improves dv/dt immunity, suppresses parasitic turn-on, and ensures faster turn-off of SiC MOSFETs and IGBTs.9 A peak source and sink drive capability (separate pins): Enables tailored turn-on and turn-off timing to optimize efficiency and reduce switching losses.Integrated protections: DESAT detection, active soft shutdown, UVLO, TSD, and fault output: Enhances system reliability and protects valuable power switches during fault conditions.3.3 V TTL/CMOS-compatible inputs: Tolerant up to 7 V, allowing easy interfacing with most control logic.AEC-Q100 qualified and thermally robust: Ensures consistent performance across a wide temperature range, with improved thermal threshold accuracy and charge pump operation maintained during thermal shutdown.Markets & ApplicationAutomotive DC-DC ConvertersElectric Vehicle DrivetrainsEV Inverters and Motor DrivesSwitching Power SuppliesMarket DifferentiatorsCompared to conventional low-side gate drivers, the IX4352NEAU increases power density, reduces component count, and provides a safer overcurrent turn-off transition. Its built-in charge pump regulator with adjustable negative bias is a market first, offering automotive designers a fully integrated solution to overcome parasitic turn-on and improve switching behavior in SiC- and IGBT-based systems.The IX4352NEAU is an automotive-grade extension of the proven commercial-grade IX4352NE, optimized to meet the strict reliability and performance demands of automotive environments.Frequently Asked Questions (FAQs)Quick answers to common questions about the IX4352NEAU Gate Driver1. What makes the IX4352NEAU unique compared to other gate drivers?The IX4352NEAU is the first AEC-Q100-qualified low-side gate driver with an integrated, adjustable negative gate bias down to −10 V. This eliminates the need for an external negative voltage supply, thereby reducing component count and system cost.2. Which power devices can the IX4352NEAU drive?It’s designed specifically to drive SiC MOSFETs and high-power IGBTs, with separate 9 A peak source and sink outputs for tailored switching performance. It’s ideal for fast-switching applications in EVs and other automotive systems.3. What protections are built into the device?The IX4352NEAU includes DESAT detection, active soft shutdown, thermal shutdown, and undervoltage lockout (UVLO). These features safeguard both the gate driver and the power transistors in the event of overcurrent or other fault conditions.4. How does the IX4352NEAU benefit automotive EV applications?The IX4352NEAU helps EV designers achieve higher power density and switching efficiency in systems like traction inverters and DC-DC converters. Its automotive qualification, integrated negative gate bias, and robust protection features simplify design, enhance reliability, and reduce the need for additional components—making it ideal for demanding EV powertrain environments.AvailabilityThe IX4352NEAU is available in a 16-pin narrow package in tape and reel format (2,000/reel). Sample requests can be submitted through authorized Littelfuse distributors worldwide. For a listing of Littelfuse distributors, please visit Littelfuse.com. For More Informationhttps://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/new-littelfuse-gate-driver-simplifies-sic-and-igbt-designs-with-integrated-adjustable-negative-bias