First-in-industry low-side gate driver with adjustable negative gate drive bias offers safer operation, reduced component count, and increased power density for EV powertrain and DC-DC converter designs.The IX4352NEAU is the first AEC-Q100-qualified low-side gate driver to offer an integrated and adjustable negative gate drive bias, eliminating the need for an external negative voltage rail or the costly DC-DC converters typically required to suppress parasitic turn-on of high-speed power devices. This unique capability simplifies gate driver design, improves switching performance, and reduces total system cost.“By integrating the IX4352NEAU in their latest designs, our customers can develop safer, more compact, and more efficient power systems,” said June Zhang, Product Manager, Integrated Circuits Division at Littelfuse. “This helps accelerate their time to market, while reducing total system cost in the growing markets of automotive DC-DC converters and automotive drivetrains.”Key Features and BenefitsAdjustable negative gate drive bias (down to −10 V): Improves dv/dt immunity, suppresses parasitic turn-on, and ensures faster turn-off of SiC MOSFETs and IGBTs.9 A peak source and sink drive capability (separate pins): Enables tailored turn-on and turn-off timing to optimize efficiency and reduce switching losses.Integrated protections: DESAT detection, active soft shutdown, UVLO, TSD, and fault output: Enhances system reliability and protects valuable power switches during fault conditions.3.3 V TTL/CMOS-compatible inputs: Tolerant up to 7 V, allowing easy interfacing with most control logic.AEC-Q100 qualified and thermally robust: Ensures consistent performance across a wide temperature range, with improved thermal threshold accuracy and charge pump operation maintained during thermal shutdown.Markets & ApplicationAutomotive DC-DC ConvertersElectric Vehicle DrivetrainsEV Inverters and Motor DrivesSwitching Power SuppliesMarket DifferentiatorsCompared to conventional low-side gate drivers, the IX4352NEAU increases power density, reduces component count, and provides a safer overcurrent turn-off transition. Its built-in charge pump regulator with adjustable negative bias is a market first, offering automotive designers a fully integrated solution to overcome parasitic turn-on and improve switching behavior in SiC- and IGBT-based systems.The IX4352NEAU is an automotive-grade extension of the proven commercial-grade IX4352NE, optimized to meet the strict reliability and performance demands of automotive environments.Frequently Asked Questions (FAQs)Quick answers to common questions about the IX4352NEAU Gate Driver1. What makes the IX4352NEAU unique compared to other gate drivers?The IX4352NEAU is the first AEC-Q100-qualified low-side gate driver with an integrated, adjustable negative gate bias down to −10 V. This eliminates the need for an external negative voltage supply, thereby reducing component count and system cost.2. Which power devices can the IX4352NEAU drive?It’s designed specifically to drive SiC MOSFETs and high-power IGBTs, with separate 9 A peak source and sink outputs for tailored switching performance. It’s ideal for fast-switching applications in EVs and other automotive systems.3. What protections are built into the device?The IX4352NEAU includes DESAT detection, active soft shutdown, thermal shutdown, and undervoltage lockout (UVLO). These features safeguard both the gate driver and the power transistors in the event of overcurrent or other fault conditions.4. How does the IX4352NEAU benefit automotive EV applications?The IX4352NEAU helps EV designers achieve higher power density and switching efficiency in systems like traction inverters and DC-DC converters. Its automotive qualification, integrated negative gate bias, and robust protection features simplify design, enhance reliability, and reduce the need for additional components—making it ideal for demanding EV powertrain environments.AvailabilityThe IX4352NEAU is available in a 16-pin narrow package in tape and reel format (2,000/reel). Sample requests can be submitted through authorized Littelfuse distributors worldwide. For a listing of Littelfuse distributors, please visit Littelfuse.com. For More Informationhttps://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/new-littelfuse-gate-driver-simplifies-sic-and-igbt-designs-with-integrated-adjustable-negative-bias

In this issue, we introduce the Taoglas LoPro™ antenna series, powered by OptConnect and in partnership with Patrick Industries, Inc., designed specifically for RVs to deliver exceptional performance in a compact and rugged form factor. You can also keep up to date with the latest NPI releases and developments by visiting the New Product Updates page on taoglas.com.In today’s RV market, reliable connectivity is no longer a luxury; it’s an expectation. That’s why we have launched the Taoglas LoPro™ antenna series.  Specifically designed for RVs, the Taoglas LoPro™ antenna offers exceptional performance in a compact and rugged design. This next-generation, super-low-profile RV roof-mount antenna eliminates the need for multiple antenna installations.With years of experience in high-performance transportation antennas, the Taoglas LoPro™ features multi-radio technology from GNSS, 5G/4G cellular, Wi-Fi®, TV and radio reception.  65% lower in height than standard RV antennas, it ensures seamless plug-and-play compatibility with leading industry routers providing reliable connectivity whether you’re navigating city streets or exploring remote locations. Discover more here

Wolfspeed Launches New Gen 4 MOSFET Technology Platform to Deliver Breakthrough Performance in Real-World Conditions for High-Power Applicationsi. Wolfspeed’s highly flexible Gen 4 MOSFET technology platform supports long-term roadmaps for high-performance, application-optimized productsii. Holistic efficiency improvements enable reduced system costs and development time while maximizing application lifetime, representing a pivotal progression for silicon carbide technologyiii. Wolfspeed’s U.S- based silicon carbide substrate and device manufacturing supports domestic security protectionDURHAM, N.C., January 22, 2025 – Wolfspeed, Inc. (NYSE: WOLF), the global leader in silicon carbide technology, today introduced its new Gen 4 technology platform, which enables design rooted in durability and efficiency, all while reducing system cost and development time. Engineered to simplify switching behaviors and design challenges commonly experienced in high-power designs, Gen 4 charts a long-term roadmap across Wolfspeed’s product categories, including power modules, discrete components, and bare die products. These products are currently available in the 750V, 1200V and 2300V classes.“We understand that each application’s design comes with a unique set of requirements,” said Jay Cameron, senior vice president of Wolfspeed power products. “From its inception, our goal for Gen 4 has been to improve overall system efficiency in real-world operating environments, with a focus on delivering maximum performance at the system level. Gen 4 enables design engineers to create more efficient, longer-lasting systems that perform well in tough operating environments at a better overall system cost.”Silicon carbide technology is one of the fastest growing components of both the power device market and the greater semiconductor industry. A superior alternative to silicon, silicon carbide is ideal for high power applications – such as EV powertrains, e-mobility, renewable energy systems, battery energy storage systems, and AI data centers – that unlocks improved performance and lower system costs.As the U.S. and the globe pursue more efficient and environmentally friendly solutions to meet the world’s ever-increasing need for high-voltage energy sources, it is crucial that the U.S. continue to make strategic investments to cement its technological dominance, while continuing to spur American innovation in critical technologies.Wolfspeed is the only silicon carbide producer with both silicon carbide material and silicon carbide device fabrication facilities based in the United States, a factor that is becoming increasingly important under the new U.S. Administration’s increased focus on national security and investment in U.S. semiconductor production.“Innovative technology unlocks business opportunity,” said Devin Dilley, president and chief product officer, EPC Power, a U.S.-based utility-scale inverter manufacturer. “Wolfspeed’s new Gen 4 SiC technology is enabling EPC Power to make a paradigm shift in how energy is created and stored globally.”“As the world-leader in silicon carbide technology, based on American IP and delivered through U.S.-based fabrication facilities, Wolfspeed has been relentless in our drive to continue to innovate and bring our silicon carbide solutions to more and more industries with increasingly challenging use cases,” said Wolfspeed Executive Chairman, Tom Werner.  “Our Gen 4 platform will be delivered via our highly efficient 200mm wafers, which will enable us to deliver products on a scale and level of yield not seen in this industry before.”Wolfspeed’s Gen 4 platform was designed to comprehensively improve system efficiency and prolong application life, even in harshest of environments, while helping to reduce system cost and development time.  The technology will deliver significant performance enhancements for designers of high-power automotive, industrial, and renewable energy systems, with key benefits including:Holistic System Efficiency: Delivering up to a 21% reduction in on-resistance at operating temperatures with up to 15% lower switching losses.Durability: Ensuring reliable performance, including a short-circuit withstand time of up to 2.3 µS to provide additional safety margin.Lower System Cost: Streamlining design processes to reduce system costs and development time.Learn more in Wolfspeed’s white paper “Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications”.AvailabilityWolfspeed’s Gen 4 products are available in 750V, 1200V and 2300V nodes, with options for power modules, discrete components, and bare die products.  New product introductions, including additional footprints and RDSON ranges, will be available throughout 2025 and early 2026.

The PI3HDX12311 and PI3HDX6311 are 3.3V quad-channel hybrid ReDrivers. The PI3HDX12311 supports HDMI 2.1 fixed rate link (FRL) up to 12Gbps and transition-minimized differential signaling (TMDS) up to 6Gbps; the PI3HDX6311 supports HDMI 2.0 TMDS up to 6Gbps. Both are backward compatible to HDMI 1.4.  For HDMI 1.4 applications, both are configured as a limited ReDriver (where the ReDriver’s differential output swing is defined by the swing setting), ensuring HDMI-compliant levels at the receptacle.  For HDMI 2.0 and HDMI 2.1, the devices are configured as linear ReDrivers (where the differential output swing is directly proportional to the received signal), which ensures that the ReDrivers function as trace cancellers. The linear ReDriver mode is also inherently transparent to link training signals. The PI3HDX12311 and PI3HDX6311 are equipped with pin-strap mode control for operational mode, equalization, flat gain, output swing (SW), and output -1dB linearity swing (N1SW).  Both devices support dual-mode DisplayPort™ (DP++) level shift applications for HDMI TMDS output signals. Their input and output signals can be AC- or DC-coupled, or mixed, which can eliminate the need for additional level-shifter components from the data channels. Low 726mW power dissipation at maximum output swing increases operating time in portable and mobile devicesEnables 8K DTV video resolution at aggregated 4-channel data rates up to 48Gbps (12Gbps per channel)Product package: X1-QFN2845-32 (XEA32) (2.85mm x 4.5mm)Read moreTypical Application